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| TYPICAL PERFORMANCE CURVES (R) APT25GP120BDQ1 APT25GP120BDQ1G* APT25GP120BDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT (R) TO -2 47 The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 800V, 11A * 50 kHz operation @ 800V, 19A * RBSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT25GP120BDQ1(G) UNIT Volts 1200 30 69 33 90 90A @ 960V 417 -55 to 150 300 Amps @ TC = 150C Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 1200 3 4.5 3.3 3.0 350 2 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Volts I CES I GES A nA 6-2005 050-7457 Rev A Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 3000 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT25GP120BDQ1(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 25A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 2090 200 40 7.5 110 15 50 90 12 14 70 39 500 1090 440 12 14 110 90 500 1575 1185 J ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 25A RG = 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V I C = 25A RG = 5 J Turn-on Switching Energy (Diode) 6 TJ = +125C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .30 1.18 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7457 Rev A 6-2005 TYPICAL PERFORMANCE CURVES 60 50 40 30 60 50 40 30 APT25GP120BDQ1(G) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25C 20 TJ = 25C 20 TJ = 125C 10 0 TJ = 125C 10 0 100 FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 25A C T = 25C J 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 80 VCE =240V VCE =600V 60 TJ = -55C 40 TJ = 25C 20 TJ = 125C 0 8 6 4 2 0 VCE = 480V 0 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 1 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 120 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 50A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 50A IC = 25A IC = 12.5A IC = 25A IC = 12.5A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 6 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100 0 -25 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 90 80 70 60 50 40 30 20 10 6-2005 050-7457 Rev A 1.06 1.02 0.98 0.94 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 16 td(ON), TURN-ON DELAY TIME (ns) 14 12 10 8 6 4 VCE = 600V T = 25C, TJ =125C L = 100H 140 td (OFF), TURN-OFF DELAY TIME (ns) VGE = 15V 120 100 80 60 40 20 VCE = 600V RG = 5 VGE =15V,TJ=125C APT25GP120BDQ1(G) VGE =15V,TJ=25C 2 RJ = 5 G 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 30 25 20 15 10 5 RG = 5, L = 100H, VCE = 600V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100 tf, FALL TIME (ns) 80 60 40 20 0 TJ = 25C, VGE = 15V 0 L = 100 H RG = 5, L = 100H, VCE = 600V tr, RISE TIME (ns) TJ = 125C, VGE = 15V TJ = 25 or 125C,VGE = 15V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3500 EON2, TURN ON ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0 EOFF, TURN OFF ENERGY LOSS (J) V = 600V CE V = +15V GE R = 5 G 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 V = 600V CE V = +15V GE R = 5 G TJ = 125C,VGE =15V 2000 TJ = 125C, VGE = 15V 1500 1000 500 TJ = 25C, VGE = 15V TJ = 25C,VGE =15V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4500 SWITCHING ENERGY LOSSES (J) 4000 3500 3000 2500 2000 1500 1000 500 0 Eoff,12.5A Eoff,25A Eon2,12.5A Eon2,25A Eoff,50A V = 600V CE V = +15V GE T = 125C J 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500 1000 500 0 Eon2,12.5A Eoff,12.5A Eoff,50A Eoff,25A Eon2,25A V = 600V CE V = +15V GE R = 5 G 0 Eon2,50A Eon2,50A Rev A 6-2005 050-7457 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 10,000 IC, COLLECTOR CURRENT (A) 5,000 Cies C, CAPACITANCE ( F) P 100 90 80 70 60 50 40 30 20 10 APT25GP120BDQ1(G) 1,000 500 Coes 100 50 Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: ZJC, THERMAL IMPEDANCE (C/W) PDM 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 182 FMAX, OPERATING FREQUENCY (kHz) 100 RC MODEL Junction temp (C) 0.128 Power (watts) 0.173 Case temperature(C) 0.171 0.00833 50 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125C J T = 75C C D = 50 % V = 800V CE R = 5 G F fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 5 10 050-7457 Rev A 6-2005 APT25GP120BDQ1(G) Gate Voltage t d(on) T J = 125 C APT15DQ120 10% V CC IC V CE tr 90% A D.U.T. Collector Current 5% Switching Energy 5% 10% Collector Voltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST 90% Gate Voltage T J = 125 C *DRIVER SAME TYPE AS D.U.T. A V CE td(off) tf Collector Voltage 100uH 90% 10% Switching Energy 0 Collector Current IC V CLAMP B A DRIVER* D.U.T. Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit 050-7457 Rev A 6-2005 TYPICAL PERFORMANCE CURVES APT25GP120BDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 25A Forward Voltage IF = 50A IF = 25A, TJ = 125C MIN All Ratings: TC = 25C unless otherwise specified. APT25GP120BDQ1(G) UNIT Amps 15 29 110 TYP MAX UNIT Volts STATIC ELECTRICAL CHARACTERISTICS 3.24 4.03 2.91 MIN TYP MAX UNIT ns nC DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7 21 240 260 3 290 960 6 130 1340 19 - IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C - Amps ns nC Amps ns nC Amps IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C 0.5 Note: PDM 0.3 SINGLE PULSE t1 t2 0.1 0.05 10-5 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp. (C) 0.676 Power (watts) 0.504 Case temperature. (C) 0.0440 0.00147 FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 050-7457 Rev A 6-2005 60 50 40 30 20 10 0 trr, REVERSE RECOVERY TIME (ns) TJ = 175C TJ = 125C TJ = 25C TJ = -55C 400 350 300 250 200 150 100 50 0 30A APT25GP120BDQ1(G) T = 125C J V = 800V R IF, FORWARD CURRENT (A) 15A 7.5A 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 30A T = 125C J V = 800V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25 T = 125C J V = 800V R 0 30A 2000 20 1500 15A 15 1000 7.5A 10 15A 500 5 7.5A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of ChangeTum tes35 30 25 IF(AV) (A) 20 15 10 5 Duty cycle = 0.5 T = 175C J 0 trr trr IRRM Qrr Qrr 0.4 0.2 0.0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1 0 75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature 0 25 50 050-7457 Rev A 6-2005 TYPICAL PERFORMANCE CURVES +18V 0V diF /dt Adjust Vr APT10078BLL APT25GP120BDQ1(G) D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 34, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7457 Dimensions in Millimeters and (Inches) Rev A 6-2005 19.81 (.780) 20.32 (.800) Gate Collector (Cathode) Emitter (Anode) |
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